PDF全文下载：2011050538
祁树锋1, 曾泰2, 张晓倩3, 刘红兵4, 杨洁5
（1.第二炮兵工程学院 六系，西安 710025；2.空军雷达学院二系，武汉 430010；3.太原卫星发射中心，太原 030000；
4.中电集团第13研究所，石家庄 050051；5.军械工程学院 静电与电磁防护研究所，石家庄 050003）
摘要: 针对2SC3356晶体管进行了ESD潜在性失效判别的参数研究，研究的参数包括结电容和噪声系数、结反向击穿电压和结反向漏电流，以及高温反偏的方法来检验器件是否受到潜在性损伤。提出了检验双极型硅器件受到ESD潜在性损伤的最有效方法，即精确测试器件的直流参数，特别是直流放大倍数hFE及反向漏电流ICEO，是检验双极型硅器件是否受到ESD潜在性损伤的最有效方法。
关键词: 2SC3356晶体管； ESD； 微电子器件； 潜在性失效
中图分类号: O 441文献标志码： A
Study on Latent Failure Parameters Criterion of 2SC3356 Caused by ESD
QI Shu-feng1, ZENG Tai2, ZHANG Xiao-qian3, LIU Hong-bing4, YANG Jie5
(1.6th Department, Second Artillery Engineering University, Xi’an, 710025; 2.2th Department,Air Radar University, Wuhan, 430010;
3.Taiyuan Satellites Launch Center, Taiyuan, 030000; 4.The 13th Research Institute of China Electron Group, Shijiazhuang, 050051;
5.Electrostatic and Electromagnetic Protection Research Institute, Shijiazhuang Ordnance Engineering College, Shijiazhuang, 050003)
Abstract: This paper studied the parameters which are very likely to be the latent failure of bipolar Si-device caused by ESD. The parameters included junction capacitance, noise coefficient, reverse breakdown voltage and reverse leakage current.In addition to all of the above, the high-temperature reverse method is also used to test whether the latent failure of Si-device yielding is caused by ESD.The direct current parameters of device,especially the direct current amplification hFE and anti-flow leakage current ICEO,are the most effectively and important papameters which can be used to test whether the latent failure of bipolar Si-device yielding is caused by ESD.
Key words: 2SC3356 transistor； ESD; microelectronic device; latent failure
收稿日期:2011-03-17
基金项目： 国家自然科学基金重点项目（50237040）；国家自然科学基金面上项目（60671044）.
作者简介: 祁树锋（1978—）,男，博士.
