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钴掺杂锗基稀磁半导体的制备

作者:时间:2014-10-10点击数:

PDF全文下载:2011050543

王伟, 敬承斌*

 (青岛科技大学 材料科学与工程学院,山东 青岛 266042)

 摘要:  采用溶胶-凝胶法制备出钴掺杂的锗基稀磁半导体。利用场发射扫描电子显微镜(SEM),X射线衍射仪(XRD)、拉曼光谱仪和多功能物相测试系统(PPMS)对产物进行表征。结果表明,钴掺杂物的添加并没有影响试样的表面形貌。当m(乙酸钴)/m(二氧化锗)<0.010 0,试样具有单一立方锗晶体结构;而m(乙酸钴)/m(二氧化锗)=0.025 0的试样中存在着CoGe第二相化合物。拉曼测试表明,钴原子已经掺杂进入锗晶格中。室温条件下的磁滞回线表明,m(乙酸钴)/m(二氧化锗)=0.010 0的样品具有室温铁磁性。

关键词:   稀磁半导体; 锗; 溶胶-凝胶法; 室温铁磁性

中图分类号: O 482.54;TB 383文献标志码: A

 Synthesis of Ge-based Diluted Magnetic Semiconductors

Doped with Co

 WANG Wei, JING Cheng-bin

(College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, China)

 Abstract: Co doped Ge based diluted magnetic semiconductor materials were fabricated by using a sol-gel method. The morphologies, phase structure, and the magnetic property of the samples were characterized by field-emission scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and a multi-phase physical measurement system (PPMS). The addition of cobalt dopant does not affect the surface morphology of the samples. Samples that m(cobaltous acetate)/m(germanium dioxide) is less than 0.010 0 have a single cubic crystal Ge phase. Some CoGe secondary phases have been formed in the 0.025 0 Co-doped sample. Raman analyses disclose that cobalt atoms have been incorporated into Ge matrix. The hysteresis loop measured at room temperature shows that the 0.010 0 sample is ferromagnetic.

Key words: diluted magnetic semiconductor materials; Ge; sol-gel method; room-temperature ferromagnetism

收稿日期:2011-04-20

基金项目: 国家自然科学基金项目(50802046).

作者简介: 王伟(1986—),男,硕士研究生.*通信联系人

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