PDF全文下载：2011050543
王伟, 敬承斌*
(青岛科技大学 材料科学与工程学院，山东 青岛 266042)
摘要: 采用溶胶-凝胶法制备出钴掺杂的锗基稀磁半导体。利用场发射扫描电子显微镜（SEM），X射线衍射仪（XRD）、拉曼光谱仪和多功能物相测试系统（PPMS）对产物进行表征。结果表明，钴掺杂物的添加并没有影响试样的表面形貌。当m（乙酸钴）/m（二氧化锗）＜0.010 0，试样具有单一立方锗晶体结构；而m（乙酸钴）/m（二氧化锗）=0.025 0的试样中存在着CoGe第二相化合物。拉曼测试表明，钴原子已经掺杂进入锗晶格中。室温条件下的磁滞回线表明，m（乙酸钴）/m（二氧化锗）=0.010 0的样品具有室温铁磁性。
关键词: 稀磁半导体； 锗； 溶胶-凝胶法； 室温铁磁性
中图分类号: O 482.54；TB 383文献标志码： A
Synthesis of Ge-based Diluted Magnetic Semiconductors
Doped with Co
WANG Wei， JING Cheng-bin
(College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, China)
Abstract: Co doped Ge based diluted magnetic semiconductor materials were fabricated by using a sol-gel method. The morphologies, phase structure, and the magnetic property of the samples were characterized by field-emission scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and a multi-phase physical measurement system (PPMS). The addition of cobalt dopant does not affect the surface morphology of the samples. Samples that m(cobaltous acetate)/m(germanium dioxide) is less than 0.010 0 have a single cubic crystal Ge phase. Some CoGe secondary phases have been formed in the 0.025 0 Co-doped sample. Raman analyses disclose that cobalt atoms have been incorporated into Ge matrix. The hysteresis loop measured at room temperature shows that the 0.010 0 sample is ferromagnetic.
Key words: diluted magnetic semiconductor materials; Ge; sol-gel method; room-temperature ferromagnetism
收稿日期:2011-04-20
基金项目： 国家自然科学基金项目（50802046）.
作者简介: 王伟（1986—）,男，硕士研究生.*通信联系人
