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多晶硅生产中氯化氢吸收塔的模拟研究

作者:时间:2014-06-12点击数:

全文下载:2013020147

冯泽民, 田先瑞

(大全新能源有限公司, 重庆 404020)

摘要: 采用PRO/II模拟软件,选用PRM方程,对多晶硅生产过程中氯化氢吸收塔进行了模拟研究。结果表明,在操作压力为1.5 MPaG(相对压力)、吸收剂温度为-40 ℃、理论塔板数为24块时,选择合适的氯硅烷吸收剂用量可对尾气中的HCl实现良好的吸收。

关键词: 多晶硅; PRO/II模拟软件; 氯化氢; 生产工艺

中图分类号: TQ 11文献标志码: A

Simulation Study on the Hydrogen Chloride Absorption Column in the Polysilicon Production Process

FENG Ze-min,TIAN Xian-rui

(Daqo New Energy Co., LTD., Chongqing 404020,China)

Abstract: This paper simulates the HCl adsorption column in the polysilicon production process with the software PRO/II and selecting PRM formula as the calculation method. The results showed that when the states of tower was 24, the operation pressure of adsorption column was 1.5MPaG(relative pressure) and the temperature of adsorbents was-40 ℃, HCl can be adsorbed completely by chlorosilane.

Key words: polysilicon; simulation software PRO/II; hydrochloric acid; process technology

收稿日期:2012-03-19

作者简介: 冯泽民(1984—),男,工程师.

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