一步法制备N掺杂SiC纳米线及场发射性能研究

PDF全文下载：2017010053

张栋梁，宋冠英*， 李镇江， 孙莎莎

(青岛科技大学 中德科技学院；机电工程学院；山东省高分子材料先进制造技术重点实验室，山东 青岛266061)

 摘要：采用简单的化学气相沉积法，首次以尿素（CO(NH2)2）为N掺杂剂，与Si/SiO2粉体混合，一步法实现了高质量的N掺杂SiC纳米线的制备，并系统研究了不同原料质量比m(Si/SiO2)∶m(CO(NH2)2)、不同合成温度对N掺杂SiC纳米线场发射性能的影响规律。研究得出：原料质量比m(Si/SiO2)∶m(CO(NH2)2)为1∶3，合成温度为1 250℃时，产物具有最优的场发射性能，其开启电场和阈值电场分别为1.2 V·μm-1和3.3 V·μm-1。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）、X-射线衍射仪（XRD）、能谱仪（EDS）等测试手段对优选工艺条件下所得产物的微观形貌、元素组成和物相结构进行了系统表征，结果表明：所得产物为具有立方结构的β-SiC晶体，纳米线的直径均匀，约为80 nm，长度可达数十微米，N元素在产物中的原子分数为3.28%。

关键词：SiC纳米线；N掺杂； 一步化学气相沉积法； 场发射性能

中图分类号：O 462.4；O 613.7文献标志码：A

引用格式：张栋梁，宋冠英，李镇江，等.一步法制备N掺杂SiC纳米线及场发射性能研究［J］.青岛科技大学学报(自然科学版), 2017, 38(1): 5357.

ZHANG Dongliang, SONG Guanying, LI Zhenjiang，et al.Singlestep synthesis of nitrogendoped SiC nanowires and their field emission properties［J］.Journal of Qingdao University of Science and Technology（Natural Science Edition), 2017, 38(1): 5357.

Single-step Synthesis of Nitrogen-Doped SiC Nanowires and Their Field Emission Properties

ZHANG Dongliang, SONG Guanying, LI Zhenjiang， SUN Shasha

(College of Chinesisch-Deutsche Technische Fakultat；College of Electromechanical Engineering；Key Laboratory of Polymer Material Advanced Manufactorings Technology of Shandong Provincial, Qingdao University of Science and Technology, Qingdao 266061, China)

Abstract: In this paper, we proposed a single-step chemical vapor deposition (CVD) method for synthesizing N-doped SiC nanowires by using carbamide and Si/SiO2 powders as raw materials. Effects of raw materials ratio and synthesis temperature on the field emission properties of N-doped SiC nanowireswereinvestigated in detail. The results showed that when the raw material mass ratio (m(Si/SiO2)∶m(CO(NH2)2) was 1∶3 and the synthesis temperature was 1 250 ℃, the asprepared N-doped SiC nanowires exhibited optimal field emission properties with Eto and Ethrof 1.2 and 3.3 V·μm-1, respectively. The morphologies, element analysis, and crystal structures of the products were characterized by field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray energy dispersive spectrum (EDS), and X-ray diffraction (XRD). N-doped SiC nanowires showed uniform diameter of 80 nm and dozens of micrometers length, and the nitrogen atomic concentrations was 3.28%.

Key words: SiC nanowires; N-doped; single-step chemical vapor deposition; field emission properties

收稿日期：20151105

基金项目：国家自然科学基金项目（51572137，51502149，51272117，51172115）；山东省自然科学基金项目（ZR2015PE003，ZR2011EMZ001,ZR2013EMQ006）；山东省自然科学杰出青年基金项目（BS2013CL040）；山东省科技攻关项目基金项目（2012GGX10218）.

作者简介：张栋梁（1989—），男，硕士研究生. *通信联系人.

文章编号：16726987（2017）01005305；DOI：10.16351/j.16726987.2017.01.009