基于CAD/CFD理论对连续制备SiC一维纳米材料CVD反应室结构的设计与模拟优选

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刘晓珑， 李镇江*， 孟春雷

（青岛科技大学 机电工程学院，山东 青岛 266061）

 摘要： 根据自主研制的用于制备SiC一维纳米材料的可控气氛炉内的空间尺寸以及通气方式，设计了4种不同结构的化学气相沉积（CVD）反应室（“S”型结构，“三角”型结构，“双三角”型结构，“回”型结构），并基于CFD原理，使用Fluent软件对这4种反应室内的温度场及气流场进行了模拟，得到了各反应室内温度及气体流速的分布云图。通过比较分析发现，在达到稳态后，4种结构反应室内气孔附近的温度均比较低；但气流场模拟结果显示，“回”型结构CVD反应室内，在产物生长的基片表面附近存在气体流量最多且层流面积最大，适于SiC纳米线生长的面积最大，最适用于SiC一维纳米材料的连续制备，其结果已被实验验证。

关键词： CAD/CFD理论；SiC一维纳米材料；CVD反应室

中图分类号： TE 319                文献标志码： A

Design and Simulation Optimization of CVD Reaction Chamber of Continuous

Preparation of SiC Onedimensional Nanomaterials Based on CAD/CFD Theory

 LIU Xiaolong, LI Zhenjiang, MENG Chunlei

(College of Electromechanical Engineering,QingdaoUniversityof Science and Technology,Qingdao266061,China)

 Abstract: In this paper, according to the space size and ventilation of selfdesigned controlled atmosphere furnace for continuous preparing SiC nanowires (SiC NWs), CVD reaction chamber of four different structure (“S” structure, “triangle” structure, “double triangle” structure, “回” structure) was designed, and the temperature and gas flow field of the four reactors was simulated based on CFD principle by using Fluent software, the distribution cloud pictures of temperature and gas flow rate in every reaction chamber were obtained. By comparison we found that the temperature was lower near the hole in the four reaction chamber after reaching the steady state, but the gas flow field simulation results show that the CVD reaction chamber of “回” structure was the best suited for continuous preparation of SiC NWs, because the gas flow was the most and the laminar flow area was the largest near the substrate surface, the area of suitable for SiC NWs growth was the largest. These results have been confirmed by experiments.

Key words: CAD/CFD theory; SiC onedimensional nanomaterials; CVD reaction chamber

 收稿日期： 20150514

基金项目： 国家自然科学基金项目（51272117，51172115）；山东省科技发展计划项目（2012GGX10218).

作者简介： 刘晓珑（1989—），男，硕士研究生.       *通信联系人.

文章编号：16726987（2015）05052406； DOI： 10.16351/j.16726987.2015.05.010